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IRHM7Z60 - RADIATION HARDENED POWER MOSFET THRU-HOLE

Download the IRHM7Z60 datasheet PDF. This datasheet also covers the IRHM8Z60 variant, as both devices belong to the same radiation hardened power mosfet thru-hole family and are provided as variant models within a single manufacturer datasheet.

Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalan.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHM8Z60_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRHM7Z60 Radiation Hardened Power MOSFET IRF
IRHM7064 N-Channel Transistor IRF
IRHM7130 Power MOSFET IRF
IRHM7150 Power MOSFET IRF
IRHM7250 Power MOSFET IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHM7054 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM7064 (IRHM7064 / IRHM8064) TRANSISTOR N-CHANNEL
IRHM7130 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM7150 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM7160 Radiation Hardened Power MOSFET

Full PDF Text Transcription

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www.datasheet4u.com PD - 91701B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number Radiation Level IRHM7Z60 100K Rads (Si) IRHM3Z60 300K Rads (Si) IRHM4Z60 600K Rads (Si) IRHM8Z60 1000K Rads (Si) RDS(on) 0.014Ω 0.014Ω 0.014Ω 0.014Ω ID 35*A 35*A 35*A 35*A IRHM7Z60 30V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY ™ ® TO-254AA International Rectifier’s RAD-Hard ogy provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
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