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IRHMS597Z60 - RADIATION HARDENED POWER MOSFET

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Overview

PD-94666C RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) IRHMS597Z60 30V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHMS597Z60 100K Rads (Si) IRHMS593Z60 300K Rads (Si) RDS(on) 0.014Ω 0.014Ω ID -45A* -45A* International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications.

These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).

The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.

Key Features

  • n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C Continuous Drain Current ID @ VGS = -12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current À PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-So.

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