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IRHN7150 - Radiation Hardened Power MOSFET

Download the IRHN7150 datasheet PDF (IRHN3150 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for radiation hardened power mosfet.

Description

IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

These devices have been characterized for both Total Dose and Single Event Effects (SEE).

Features

  • Single event effect (SEE) hardened.
  • Low RDS(on).
  • Low total gate charge.
  • Simple drive requirements.
  • Hermetically sealed.
  • Electrically isolated.
  • Ceramic eyelets.
  • Light weight.
  • Surface Mount.
  • ESD rating: Class 3A per MIL-STD-750, Method 1020 Product Summary.
  • BVDSS: 100V.
  • ID : 34A.
  • RDS(on),max : 65m.
  • QG,max : 160nC.
  • REF: MIL-PRF-19500/603 Potential.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHN3150_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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IRHN7150 (JANSR2N7268U) Radiation Hardened Power MOSFET Surface Mount (SMD-1) 100V, 34A, N-channel, Rad Hard HEXFET™ Technology PD-90720G Features  Single event effect (SEE) hardened  Low RDS(on)  Low total gate charge  Simple drive requirements  Hermetically sealed  Electrically isolated  Ceramic eyelets  Light weight  Surface Mount  ESD rating: Class 3A per MIL-STD-750, Method 1020 Product Summary  BVDSS: 100V  ID : 34A  RDS(on),max : 65m  QG,max : 160nC  REF: MIL-PRF-19500/603 Potential Applications  DC-DC converter  Motor drives SMD-1 Product Validation Qualified to JANS screening flow according to MIL-PRF-19500 for space applications Description IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.
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