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International Rectifier Electronic Components Datasheet

IRHN7250 Datasheet

(IRHN7250 / IRHN8250) TRANSISTOR N-CHANNEL

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Provisional Data Sheet PD 9.679C
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHN7250
IRHN8250
N-CHANNEL
MEGA RAD HARD
200 Volt, 0.10, MEGA RAD HARD HEXFET
International Rectifier’s MEGA RAD HARD technology
HEXFET power MOSFETs demonstrate excellent
threshold voltage stability and breakdown voltage sta-
bility at total radiation doses as high as 1 x 106 Rads
(Si). Under identical pre- and post-radiation test con-
ditions, International Rectifier’s RAD HARD HEXFETs
retain identical electrical specifications up to 1 x 105
Rads (Si) total dose. At 1 x 106 Rads (Si) total dose,
under the same pre-dose conditions, only minor shifts
in the electrical specifications are observed and are so
specified in table 1. No compensation in gate drive cir-
cuitry is required. In addition, these devices are capable
of surviving transient ionization pulses as high as 1 x
1012 Rads (Si)/Sec, and return to normal operation within
a few microseconds. Single Event Effect (SEE) testing
of International Rectifier RAD HARD HEXFETs has dem-
onstrated virtual immunity to SEE failure. Since the
MEGA RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can
expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, au-
dio amplifiers and high-energy pulse circuits in space
and weapons environments.
Product Summary
Part Number
BVDSS
IRHN7250
200V
IRHN8250
200V
RDS(on)
0.10
0.10
ID
26A
26A
Features:
s Radiation Hardened up to 1 x 106 Rads (Si)
s Single Event Burnout (SEB) Hardened
s Single Event Gate Rupture (SEGR) Hardened
s Gamma Dot (Flash X-Ray) Hardened
s Neutron Tolerant
s Identical Pre- and Post-Electrical Test Conditions
s Repetitive Avalanche Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
s Surface Mount
s Light-weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current Œ
Repetitive Avalanche Energy Œ
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
Pre-Radiation
IRHN7250, IRHN8250 Units
26
16 A
104
150 W
1.2 W/K 
±20 V
500 mJ
26 A
15 mJ
5.0 V/ns
-55 to 150
oC
300 (for 5 sec.)
2.6 (typical)
g
DataSheet4 U .com
To Order
F-347


International Rectifier Electronic Components Datasheet

IRHN7250 Datasheet

(IRHN7250 / IRHN8250) TRANSISTOR N-CHANNEL

No Preview Available !

www.DataShePetr4eUv.ciooums Datasheet
Index
IRHN7250/IRHN8250 Devices
Next Data Sheet
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Pre-Radiation
BVDSS
BVDSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
200
2.0
8.0
Typ. Max. Units
—— V
0.28 — V/°C
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
— 0.10
— 0.11
— 4.0
——
— 25
— 250
— 100
— -100
— 170
— 30
— 60
— 33
— 140
— 140
— 140
2.0 —
4.1 —
4700
850
210
VGS = 12V, ID = 16A
VGS = 12V, ID = 26A

V VDS = VGS, ID = 1.0 mA
S( )
VDS > 15V, IDS = 16A 
µA
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
VGS =12V, ID = 26A
nC VDS = Max. Rating x 0.5
(see figures 23 and 31)
VDD = 100V, ID = 26A,
ns RG = 2.35
(see figure 22)
Measured from the Modified MOSFET
drain lead, 6mm (0.25 symbol showing the
in.) from package to internal inductances.
nH
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
VGS = 0V, VDS = 25V
pF f = 1.0 MHz
(see figure 22)
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) Œ
— — 26 A Modified MOSFET symbol showing the
— — 104
integral reverse p-n junction rectifier.
VSD
t rr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJPCB
F-348
Junction-to-PC board
DataSheet4 U .com
— — 1.9 V
— 820 ns
— 12 µC
Tj = 25°C, IS = 26A, VGS = 0V 
Tj = 25°C, IF = 26A, di/dt 100A/µs
VDD 50V 
Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by LS + LD.
Min. Typ. Max. Units
Test Conditions
— — 0.83
K/W
— TBD —
soldered to a copper-clad PC board
To Order


Part Number IRHN7250
Description (IRHN7250 / IRHN8250) TRANSISTOR N-CHANNEL
Maker International Rectifier
Total Page 14 Pages
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