IRHNA63164, IRHNA67164 Datasheet - International Rectifier

IRHNA63164 POWER MOSFET

www.DataSheet4U.com PD-96959A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA67164 100K Rads (Si) IRHNA63164 300K Rads (Si) RDS(on) 0.018Ω 0.018Ω ID 56A 56A IRHNA67164 150V, N-CHANNEL TECHNOLOGY SMD-2 International Rectifier’s R6 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Ener.

IRHNA63164 Features

* n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 10

IRHNA67164_InternationalRectifier.pdf