IRHNA67160, IRHNA63160 Datasheet - International Rectifier

IRHNA67160 RADIATION HARDENED POWER MOSFET

www.DataSheet4U.com PD - 94299A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA67160 100K Rads (Si) IRHNA63160 300K Rads (Si) RDS(on) 0.01Ω 0.01Ω ID 56A 56A IRHNA67160 100V, N-CHANNEL TECHNOLOGY SMD-2 International Rectifier’s R6 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Ener.

IRHNA67160 Features

* n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 10

IRHNA63160_InternationalRectifier.pdf