IRHNJ593230 Datasheet - International Rectifier

IRHNJ593230 RADIATION HARDENED POWER MOSFET

www.DataSheet4U.com PD - 94046C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A IRHNJ597230 200V, P-CHANNEL 4 # TECHNOLOGY c SMD-0.5 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 8.

IRHNJ593230 Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V

IRHNJ593230_InternationalRectifier.pdf