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IRHNJ63134 - RADIATION HARDENED POWER MOSFET

Download the IRHNJ63134 datasheet PDF. This datasheet also covers the IRHNJ67134 variant, as both devices belong to the same radiation hardened power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Sing.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHNJ67134_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHNJ63130 N-Channel MOSFET
IRHNJ63230 RADIATION HARDENED POWER MOSFET
IRHNJ64130 (IRHNJ6x130) MOSFET
IRHNJ67130 Radiation Hardened Power MOSFET
IRHNJ67134 RADIATION HARDENED POWER MOSFET

Full PDF Text Transcription

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www.DataSheet4U.com PD-96931A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ67134 100K Rads (Si) IRHNJ63134 300K Rads (Si) RDS(on) 0.088Ω 0.088Ω ID 19A 19A IRHNJ67134 150V, N-CHANNEL TECHNOLOGY SMD-0.5 International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers.
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