IRHNJC9A3130, IRHNJC9A7130 Datasheet - International Rectifier

IRHNJC9A3130 N-CHANNEL POWER MOSFET

IR HiRel R9 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of low RDS(on) and faster swit.

IRHNJC9A3130 Features

* Low RDS(on)

* Fast Switching

* Single Event Effect (SEE) Hardened

* Low Total Gate Charge

* Simple Drive Requirements

* Hermetically Sealed

* Ceramic package

* Light Weight

* Surface Mount

* ESD Rating: Class 2 per MIL-STD-750, Method 1020 Absolute Ma

IRHNJC9A7130-InternationalRectifier.pdf

IRHNJC9A3130 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRHNJC9A3130, IRHNJC9A7130. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRHNJC9A3130, IRHNJC9A7130

Manufacturer:

International Rectifier

File Size:

494.02 KB

Description:

N-channel power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IRHNJC9A3130, IRHNJC9A7130.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

IRHNJC9A7130 N-CHANNEL POWER MOSFET (International Rectifier)

IRHNJ3130 N-CHANNEL MOSFET (International Rectifier)

IRHNJ4130 N-CHANNEL MOSFET (International Rectifier)

IRHNJ53034 RADIATION HARDENED POWER MOSFET (International Rectifier)

IRHNJ53130 RADIATION HARDENED POWER MOSFET (International Rectifier)

IRHNJ53230 RADIATION HARDENED POWER MOSFET (International Rectifier)

IRHNJ53Z30 RADIATION HARDENED POWER MOSFET (International Rectifier)

IRHNJ54034 RADIATION HARDENED POWER MOSFET (International Rectifier)

TAGS

IRHNJC9A3130 IRHNJC9A7130 N-CHANNEL POWER MOSFET International Rectifier

IRHNJC9A3130 Distributor