IRHQ63110 Datasheet | International Rectifier

.. - 91781B IRHQ6110 RADIATION HARDENED 100V, bination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT (LCC-28) ™ ® Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si) 0.6Ω IRHQ6110 100K Rads (Si) 1.1Ω IRHQ63110 300K Rads (Si) 1.1Ω ID 3.0A 3.0A -2.3A -2.3A CHANNEL N N P P LCC-28 International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects...