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IRHQ8110 - (IRHQx110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

Download the IRHQ8110 datasheet PDF. This datasheet also covers the IRHQ7110 variant, as both devices belong to the same (irhqx110) radiation hardened power mosfet surface mount family and are provided as variant models within a single manufacturer datasheet.

Features

  • n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings (Per Die) Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHQ7110_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 93785A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level IRHQ7110 100K Rads (Si) IRHQ3110 IRHQ4110 IRHQ8110 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) TM IRHQ7110 100V, QUAD N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY ™ ® RDS(on) 0.6Ω 0.6Ω 0.6Ω 0.75Ω ID 3.0A 3.0A 3.0A 3.0A LCC-28 International Rectifier’s RAD-Hard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
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