IRHY53130CM - (IRHY5x130CM) RADIATION HARDENED POWER MOSFET
International Rectifier (now Infineon)
Key Features
n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á.
Full PDF Text Transcription for IRHY53130CM (Reference)
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IRHY53130CM. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com PD - 93826D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number IRHY57130CM IRHY53130CM IRHY54130CM Radiation Level 100K ...
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Part Number IRHY57130CM IRHY53130CM IRHY54130CM Radiation Level 100K Rads (Si) 300K Rads (Si) 500K Rads (Si) RDS(on) 0.07Ω 0.07Ω 0.07Ω ID 18A* 18A* 18A* 18A* QPL Part Number JANSR2N7484T3 JANSF2N7484T3 JANSG2N7484T3 JANSH2N7484T3 IRHY57130CM JANSR2N7484T3 100V, N-CHANNEL REF: MIL-PRF-19500/702 TECHNOLOGY 5 IRHY58130CM1000K Rads (Si) 0.085Ω TM TO-257AA International Rectifier’s R5 technology provides high performance power MOSFETs for space applications.These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
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IRHY53130CM Datasheet
