IRHY53Z30CM - (IRHY5xZ30CM) RADIATION HARDENED POWER MOSFET
International Rectifier (now Infineon)
Key Features
n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á.
Full PDF Text Transcription for IRHY53Z30CM (Reference)
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IRHY53Z30CM. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com PD-93824E RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number Radiation Level RDS(on) IRHY57Z30CM 100K Rads (Si) 0.03Ω IR...
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art Number Radiation Level RDS(on) IRHY57Z30CM 100K Rads (Si) 0.03Ω IRHY53Z30CM 300K Rads (Si) 0.03Ω IRHY54Z30CM 500K Rads (Si) IRHF58Z30CM 1000K Rads (Si) 0.03Ω 0.035Ω IRHY57Z30CM JANSR2N7482T3 30V, N-CHANNEL REF: MIL-PRF-19500/702 5 TECHNOLOGY ID QPL Part Number 18A* JANSR2N7482T3 18A* JANSF2N7482T3 18A* JANSG2N7482T3 18A* JANSH2N7482T3 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
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IRHY53Z30CM Datasheet
