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International Rectifier Electronic Components Datasheet

IRHY54034CM Datasheet

RADIATION HARDENED POWER MOSFET THRU-HOLE

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IRHY54034CM pdf
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PD - 93825D
IRHY57034CM
RADIATION HARDENED
JANSR2N7483T3
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level RDS(on)
IRHY57034CM 100K Rads (Si) 0.04
IRHY53034CM 300K Rads (Si) 0.04
IRHY54034CM 500K Rads (Si) 0.04
IRHF58034CM 1000K Rads (Si) 0.048
60V, N-CHANNEL
REF: MIL-PRF-19500/702
5 TECHNOLOGY
™
ID QPL Part Number
18A* JANSR2N7483T3
18A* JANSF2N7483T3
18A* JANSG2N7483T3
18A* JANSH2N7483T3
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
TO-257AA
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
18*
18* A
72
75 W
0.6 W/°C
VGS
Gate-to-Source Voltage
±20 V
EAS Single Pulse Avalanche Energy Á
110
mJ
IAR Avalanche Current À
18 A
EAR
Repetitive Avalanche Energy À
7.5 mJ
dv/dt
Peak Diode Recovery dv/dt Â
10 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 (0.063in./1.6mm from case for 10sec)
oC
Weight
4.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
04/26/06


International Rectifier Electronic Components Datasheet

IRHY54034CM Datasheet

RADIATION HARDENED POWER MOSFET THRU-HOLE

No Preview Available !

IRHY54034CM pdf
IRHY57034CM, JANSR2N7483T3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
60 — —
V
VGS = 0V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown — 0.057 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
— — 0.04
VGS = 12V, ID = 18A Ã
VGS(th)
Gate Threshold Voltage
2.0 — 4.0 V
VDS = VGS, ID = 1.0mA
gfs Forward Transconductance
16 — — S ( )
VDS 15V, IDS = 18A Ã
IDSS
Zero Gate Voltage Drain Current
10
25
µA
VDS=48V ,VGS=0V
VDS = 48V,
VGS = 0V, TJ = 125°C
IGSS
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
— — 100
— — -100 nA
VGS = 20V
VGS = -20V
Qg Total Gate Charge
— — 45
VGS =12V, ID = 18A
Qgs Gate-to-Source Charge
— — 10 nC
VDS = 30V
Qgd
Gate-to-Drain (‘Miller’) Charge
— — 15
td(on)
Turn-On Delay Time
— — 25
VDD = 30V, ID = 18A,
tr
td(off)
Rise Time
Turn-Off Delay Time
— — 100
— — 35 ns
VGS =12V, RG = 7.5
tf Fall Time
— — 30
LS + LD
Total Inductance
— 6.8 — nH Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 1152 —
— 535 —
— 42 —
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — 18* A
ISM Pulse Source Current (Body Diode) À
— — 72
VSD Diode Forward Voltage
— — 1.2 V
trr Reverse Recovery Time
— — 99 ns
QRR Reverse Recovery Charge
— — 322 nC
Tj = 25°C, IS = 18A, VGS = 0V Ã
Tj = 25°C, IF = 18A, di/dt 100A/µs
VDD 25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
— — 1.67
°C/W
— — 80
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier web site.
For footnotes refer to the last page
2 www.irf.com


Part Number IRHY54034CM
Description RADIATION HARDENED POWER MOSFET THRU-HOLE
Maker International Rectifier
Total Page 8 Pages
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