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IRHY8130CM - RADIATION HARDENED POWER MOSFET THRU-HOLE

Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalan.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHY8230CM RADIATION HARDENED POWER MOSFET THRU-HOLE
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IRHY3230CM RADIATION HARDENED POWER MOSFET THRU-HOLE
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Full PDF Text Transcription

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www.DataSheet4U.com PD - 91274D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number Radiation Level IRHY7130CM 100K Rads (Si) IRHY3130CM 300K Rads (Si) IRHY4130CM 600K Rads (Si) IRHY8130CM 1000K Rads (Si) RDS(on) 0.18Ω 0.18Ω 0.18Ω 0.18Ω HEXFET® ID 14.4A 14.4A 14.4A 14.4A IRHY7130CM JANSR2N7380 100V, N-CHANNEL REF: MIL-PRF-19500/614 RAD-Hard HEXFET TECHNOLOGY ™ ® QPL Part Number JANSR2N7380 JANSF2N7380 JANSG2N7380 JANSH2N7380 TO-257AA International Rectifier’s RADHard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
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