Datasheet Summary
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PD-91401
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level IRHY9230CM 100K Rads (Si) IRHY93230CM 300K Rads (Si) RDS(on) 0.8Ω 0.8Ω
IRHY9230CM JANSR2N7383 200V, P-CHANNEL REF: MIL-PRF-19500/615
RAD-Hard HEXFET TECHNOLOGY
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ID QPL Part Number -6.5A JANSR2N7383 -6.5A JANSF2N7383
TO-257AA
International Rectifier’s RAD-Hard MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The bination of low RDS(on)...