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International Rectifier Electronic Components Datasheet

IRIS-G6351S Datasheet

INTEGRATED SWITCHER

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Data Sheet No. PD 96945A
IRIS-G6351S
Features
Oscillator is provided on the monolithic control with adopting On-Chip-
Trimming technology.
INTEGRATED SWITCHER
Package Outline
Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
Low start-up circuit current (50uA max)
Built-in Active Low-Pass Filter for stabilizing the operation in case of light
load
Avalanche energy guaranteed MOSFET with high VDSS
The built-in power MOSFET simplifies the surge absorption circuit
since the MOSFET guarantees the avalanche energy.
No VDSS de-rating is required.
Built-in constant voltage drive circuit
Various kinds of protection functions
Pulse-by-pulse Overcurrent Protection (OCP)
Overvoltage Protection with latch mode (OVP)
Thermal Shutdown with latch mode (TSD)
TO-220 Fullpack (5 Lead)
Key Specifications
Type
MOSFET
VDSS(V)
RDS(ON)
MAX
IRIS-G6351S
650
3.95Ω
AC input(V)
230±15%
85 to 264
Pout(W)
Note 1
65
30
Descriptions
Note 1: The Pout (W) represents the thermal rating at PRC Operation,
and the peak power output is obtained by approximately 120 to 140% of
the above listed. When the output voltage is low and ON-duty is narrow,
the Pout (W) shall become lower than that of above.
IRIS-G6351S is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC fly-back converter
type SMPS (Switching Mode Power Supply) applications. This IC realizes downsizing and standardizing of a power
supply system reducing external components count and simplifying the circuit designs.
(Note). PRC is abbreviation of Pulse Ratio Control(On-width control with fixed OFF-time).
Typical Connection Diagram
IRIS-G6300
OCP/FB
Vin
GND
S
D
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International Rectifier Electronic Components Datasheet

IRIS-G6351S Datasheet

INTEGRATED SWITCHER

No Preview Available !

www.DataSheet.co.kr
IRIS-G6351S
Absolute Maximum Ratings (Ta=25ºC)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
IDpeak Drain Current
*1
IDMAX Maximum switching current *5
Terminals Max. Ratings Units
1-2 2.7 A
1-2 2.7 A
Note
Single Pulse
V2-3=0.82V
Ta=-20~+125
Single Pulse
VDD=99V, L=20mH
EAS Single pulse avalanche energy *2
1-2
92 mJ IL peak=2.7A
Vin Input voltage for control part
4-3 35 V
Vth O.C.P/F.B Pin voltage
5-3 6 V
24 W With infintite heatsink
PD1 Power dissipation for MOSFET *3
1-2
1.5 W Without heatsink
Power dissipation for control part
Specified by
PD2
(Control IC) *4
4-3 0.14 W Vin×Iin
Internal frame temperature
Refer to recommended
TF in operation
- -20 ~ +125 operating temperature
Top Operating ambient temperature
- -20 ~ +125
Tstg Storage temperature
- -40 ~ +125
Tch Channel temperature
- 150
*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
Fig.1
V2-3
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current.
The maximum switching current is the Drain current determined by the drive voltage of the IC and
threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and
Pin 3 due to patterning, the maximum switching current decreases as shown by V2-3 in Fig.1
Accordingly please use this device within the decrease value, referring to the derating
curve of the maximum switching current.
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Part Number IRIS-G6351S
Description INTEGRATED SWITCHER
Maker International Rectifier
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IRIS-G6351S Datasheet PDF






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