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IRL1104LPBF Datasheet HEXFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: www.DataSheet4U.com PD -95576 Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL1104S) l Low-profile through-hole (IRL1104L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated.

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General Description

l IRL1104SPbF IRL1104LPbF HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 0.008Ω G ID = 104A† S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.

Key Features

  • L OT CODE 8024 AS S E MB L E D ON WW 02, 2000 IN T H E AS S E MB L Y L INE "L" Note: "P " in as s embly line pos ition indicates "Lead-F ree" INT E R NAT IONAL R E CT IF IE R LOGO AS S E MB L Y L OT CODE P AR T NU MB E R F 530S DAT E CODE YE AR 0 = 2000 WE E K 02 L INE L OR INT E R NAT IONAL R E CT IF IE R L OGO PAR T NU MB E R F 530S DAT E CODE P = DE S IGNAT E S L E AD-F R E E PRODU CT (OPT IONAL) YE AR 0 = 2000 WE E K 02 A = AS S E MB LY S IT E CODE AS S E MB L Y LOT CODE 8 www. irf. com I.

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