Datasheet4U Logo Datasheet4U.com

IRL1404 - HEXFET Power MOSFET

Description

Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • p Ripple ≤ 5% [ISD ].
  • VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www. irf. com 7 IRL1404 TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRL1404 N-Channel MOSFET INCHANGE
IRL1404S N-Channel MOSFET INCHANGE
IRL1404Z N-Channel MOSFET INCHANGE
IRL1004 N-Channel MOSFET INCHANGE
IRL1004S N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRL1404L HEXFET-R Power MOSFET
IRL1404LPBF Power MOSFET
IRL1404PBF Power MOSFET
IRL1404S HEXFET-R Power MOSFET
IRL1404SPBF Power MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com PD - 93854B IRL1404 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V G S RDS(on) = 4.0mΩ ID = 160A† Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Published: |