IRL1404 Datasheet - International Rectifier

HEXFET Power MOSFET

IRL1404 Features

* p Ripple ≤ 5% [ISD ]

* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www.irf.com 7 IRL1404 TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139)

IRL1404 General Description

Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provid.

IRL1404 Datasheet (151.34 KB)

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IRL1404

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International Rectifier

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151.34 KB

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Hexfet power mosfet.
www.DataSheet4U.com PD - 93854B IRL1404 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 1.

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IRL1404 HEXFET Power MOSFET International Rectifier

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IRL1404 Features

IRL1404 General Description

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