Datasheet4U Logo Datasheet4U.com

IRL2505S - Power MOSFET

This page provides the datasheet information for the IRL2505S, a member of the IRL2505L Power MOSFET family.

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • VGS = 5V for Logic Level Devices Fig 14. For N-Channel.

📥 Download Datasheet

Datasheet preview – IRL2505S

📁 Similar Datasheet

Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com PD - 91326D IRL2505S/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL2505S) l Low-profile through-hole (IRL2505L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.008Ω G ID = 104A† S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
Published: |