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IRL2910SPbF Datasheet HEXFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

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General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.

Overview

PD - 95149 IRL2910S/LPbF l Logic-Level Gate Drive l Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l.

Key Features

  • L INE "L " N ote: "P " in as s embly line pos ition indicates "L ead-F ree" OR IN T E R N AT ION AL R E CT IF IE R L OGO AS S E MB L Y L OT COD E F 530S P AR T NU MB E R D AT E COD E YE AR 0 = 2 000 WEEK 02 LINE L INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE F 530S P AR T N U MB E R DAT E CODE P = DE S IGN AT E S L E AD-F R E E P R ODU CT (OPT IONAL ) YE AR 0 = 2000 WE E K 02 A = AS S E MB L Y S IT E CODE TO-262 Package Outline IRL2910S/LPbF TO-262 Part Marking Informa.

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