D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRL3103 Peak Diode.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to a.

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET .

IRL3102

IRL3102PBF

IRL3102S

IRL3102SPBF

IRL3103D1

IRL3103D1PBF

IRL3103D1S

IRL3103D2

IRL3103D2PBF

IRL3103L

IRL3103LPBF

IRL3103PbF

IRL3103S