IRL3215PBF Datasheet, International Rectifier

KΩ QG 12V .2µF .3µF 10 V QGS QGD VGS 3mA D.U.T. + V - DS VG Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Char.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to a.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power .