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IRL3303PBF - Power MOSFET

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• Lead-Free PD - 94887 IRL3303PbF HEXFET Power MOSFET www.irf.com 1 12/11/03 IRL3303PbF 2 www.irf.com IRL3303PbF www.irf.com 3 IRL3303PbF 4 www.irf.com IRL3303PbF www.irf.com 5 IRL3303PbF 6 www.irf.com IRL3303PbF D.U.T + ‚ -  RG Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance ƒ • Ground Plane • Low Leakage Inductance Current Transformer - - „+ • dv/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + - VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.