Download IRLB3813PBF Datasheet PDF
IRLB3813PBF datasheet preview
IRLB3813PBF page 2
Page 2
IRLB3813PBF page 3
Page 3

IRLB3813PBF Key Features

  • Optimized for UPS/Inverter Applications
  • High Frequency Isolated DC-DC Converters with Synchronous Rectification for Tele and Industrial Use
  • Power Tools HEXFET® Power MOSFET VDSS RDS(on) max Qg (typ.) 30V 1.95mΩ@VGS = 10V 57nC D Benefits
  • Very Low RDS(on) at 4.5V VGS
  • Ultra-Low Gate Impedance
  • Fully Characterized Avalanche Voltage and Current
  • Lead-Free G Gate DS G TO-220AB D Drain S Source

Other IRLB3813PBF Datasheets

Manufacturer Part Number Description
INCHANGE Logo Inchange Semiconductor IRLB3813 N-Channel MOSFET

IRLB3813PBF Description

0.64 62 Units °C/W 1 07/03/09 IRLB3813PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. 14 Ciss Input Capacitance 8420 VGS = 0V Coss Output Capacitance 1620 pF VDS = 15V Crss Reverse Transfer Capacitance 650 ƒ = 1.0MHz Avalanche Characteristics Parameter dEAS Single Pulse...