IRLBD59N04E Datasheet - International Rectifier

HEXFET Power MOSFET

IRLBD59N04E Features

* 1 - ANODE - D - DRAIN - T2 - CATHODE - S - SOURCE Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Starting TJ = 25°C, L = 0.52mH TJ

IRLBD59N04E General Description

The IRLBD59N04E is a 40V, N-channel HEXFET® power MOSFET with gate protection provided by integrated back to back zener diodes. Temperature sensing is given by the change in forward voltage drop of two antiparallel electrically isolated poly-silicon diodes. The IRLBD59N04E provides cost effective te.

IRLBD59N04E Datasheet (158.88 KB)

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IRLBD59N04E

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International Rectifier

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158.88 KB

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Hexfet power mosfet.
PD -93910 www.datasheet4u.com IRLBD59N04E HEXFET® Power MOSFET VDSS = 40V RDS(on) = 0.018Ω ID = 59A l l l l l l Integrated Temperature Sensing Dio.

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IRLBD59N04E HEXFET Power MOSFET International Rectifier

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IRLBD59N04E Features

IRLBD59N04E General Description

Datasheet Details

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