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International Rectifier Electronic Components Datasheet

IRLH7134PBF Datasheet

Power MOSFET

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VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@Tc(Bottom) = 25°C)
40
3.3
39
50 i
V
mΩ
nC
A
IRLH7134PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Applications
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Features and Benefits
Features
Benefits
Low RDSon (4.7mW @ VGS = 4.5V )
Low Thermal Resistance to PCB (< 1.2°C/W)
Lower Conduction Losses
Enables better thermal dissipation
Low Profile (<0.9 mm)
results in Increased Power Density
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
Multi-Vendor Compatibility
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Industrial Qualification
Increased Reliability
Orderable part number
IRLH7134TRPBF
IRLH7134TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Notes  through ‡ are on page 9
Max.
40
± 16
26
21
134hi
85hi
50i
640
3.6
104
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 13, 2014


International Rectifier Electronic Components Datasheet

IRLH7134PBF Datasheet

Power MOSFET

No Preview Available !

IRLH7134PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
Min.
40
–––
–––
1.0
–––
–––
–––
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
37
2.8
3.9
–––
-5.6
–––
–––
–––
–––
–––
39
9.0
4.5
16
9.5
20.5
23
0.6
21
75
18
13
3720
610
350
Max. Units
Conditions
––– V VGS = 0V, ID = 250uA
––– mV/°C Reference to 25°C, ID = 1.0mA
e3.3 mΩ VGS = 10V, ID = 50A
e4.9 VGS = 4.5V, ID = 40A
2.5
–––
V
mV/°C
VDS
=
VGS,
ID
=
100μA
20
250
100
-100
–––
58
μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
nA
VGS = 16V
VGS = -16V
S VDS = 10V, ID = 50A
––– VDS = 20V
–––
–––
nC
VGS = 4.5V
ID = 50A
–––
–––
––– nC VDS = 16V, VGS = 0V
––– Ω
––– VDD = 20V, VGS = 10V
–––
–––
ns
ID = 50A
RG=1.7Ω
–––
––– VGS = 0V
––– pF VDS = 25V
––– ƒ = 1.0MHz
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
125
50
Units
mJ
A
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
i––– ––– 50
––– ––– 640
––– ––– 1.3
MOSFET symbol
A
showing the
integral reverse
G
p-n junction diode.
eV TJ = 25°C, IS = 50A, VGS = 0V
––– 25 38 ns TJ = 25°C, IF = 50A, VDD = 20V
––– 74 110 nC di/dt = 400A/μs
Time is dominated by parasitic Inductance
D
S
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
f Parameter
Junction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
1.2
30
35
22
Units
°C/W
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 13, 2014


Part Number IRLH7134PBF
Description Power MOSFET
Maker International Rectifier
PDF Download

IRLH7134PBF Datasheet PDF






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