IRLH7134TRPBF
IRLH7134TRPBF is Power MOSFET manufactured by International Rectifier.
- Part of the IRLH7134PBF comparator family.
- Part of the IRLH7134PBF comparator family.
Features and Benefits
Features
Low RDSon (≤4.7m W @ VGS = 4.5V ) Low Thermal Resistance to PCB (< 1.2°C/W) Low Profile (<0.9 mm) results in Industry-Standard Pinout ⇒ patible with Existing Surface Mount Techniques Ro HS pliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification
Orderable part number IRLH7134TRPBF IRLH7134TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm
Benefits Lower Conduction Losses Enables better thermal dissipation Increased Power Density Multi-Vendor patibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Note
Standard Pack Form Tape and Reel Tape and Reel Quantity 4000 400
EOL notice # 259
Absolute Maximum Ratings
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation Max. 40 ± 16 26 21 134 85 50 640 3.6 104 Units V g g c hi hi i
W W/°C °C
Linear Derating Factor Operating Junction and Storage Temperature Range g
0.029 -55 to + 150
Notes through are on page 9
1 .irf. © 2014 International Rectifier Submit Datasheet Feedback May 13, 2014
IRLH7134Pb F
Static @ TJ = 25°C (unless otherwise specified)
BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth...