Download IRLH7134TRPBF Datasheet PDF
International Rectifier
IRLH7134TRPBF
IRLH7134TRPBF is Power MOSFET manufactured by International Rectifier.
- Part of the IRLH7134PBF comparator family.
Features and Benefits Features Low RDSon (≤4.7m W @ VGS = 4.5V ) Low Thermal Resistance to PCB (< 1.2°C/W) Low Profile (<0.9 mm) results in Industry-Standard Pinout ⇒ patible with Existing Surface Mount Techniques Ro HS pliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number IRLH7134TRPBF IRLH7134TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Benefits Lower Conduction Losses Enables better thermal dissipation Increased Power Density Multi-Vendor patibility Easier Manufacturing Environmentally Friendlier Increased Reliability Note Standard Pack Form Tape and Reel Tape and Reel Quantity 4000 400 EOL notice # 259 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation Max. 40 ± 16 26 21 134 85 50 640 3.6 104 Units V g g c hi hi i W W/°C °C Linear Derating Factor Operating Junction and Storage Temperature Range g 0.029 -55 to + 150 Notes  through ‡ are on page 9 1 .irf. © 2014 International Rectifier Submit Datasheet Feedback May 13, 2014 IRLH7134Pb F Static @ TJ = 25°C (unless otherwise specified) BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth...