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IRLI3615 - HEXFET Power MOSFET

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • ø 3 .4 0 (.1 3 3 ) 3 .1 0 (.1 2 3 ) -A 3 .7 0 (.1 4 5 ) 3 .2 0 (.1 2 6 ) 4 .8 0 (.1 8 9 ) 4 .6 0 (.1 8 1 ) 2 .8 0 (.1 1 0 ) 2 .6 0 (.1 0 2 ) L E A D A S S IG N M E N T S 1 - G A TE 2 - D R A IN 3 - S O U RC E 7 .10 (.2 8 0 ) 6 .70 (.2 6 3 ) 1 6 .0 0 (.6 3 0 ) 1 5 .8 0 (.6 2 2 ) 1 .1 5 (.0 4 5 ) M IN. 1 2 3 N O TE S : 1 D IM E N S IO N ING & T O L E R A N C ING P E R A N S I Y 1 4 .5 M , 1 9 8 2 2 C O N T R O L L IN G D IM E N S ION : IN C H . 3.3 0 (.1 30 ) 3.1 0 (.1 22 ) -B 1 3 .7 0 (.5 4.

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Full PDF Text Transcription

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www.DataSheet4U.com PD - 94390 IRLI3615 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V G S RDS(on) = 0.085 Ω ID = 14A… Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
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