Datasheet Details
| Part number | IRLIZ34N |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 129.64 KB |
| Description | POWER MOSFET |
| Download | IRLIZ34N Download (PDF) |
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|
Overview: PD - 9.1329B IRLIZ34N HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V G S RDS(on) = 0.
| Part number | IRLIZ34N |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 129.64 KB |
| Description | POWER MOSFET |
| Download | IRLIZ34N Download (PDF) |
|
|
|
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRLIZ34NPbF | Power MOSFET | Infineon |
 |
IRLIZ34G | N-Channel MOSFET | INCHANGE |
 |
IRLIZ34G | Power MOSFET | Vishay |
| Part Number | Description |
|---|---|
| IRLIZ34NPBF | HEXFET Power MOSFET |
| IRLIZ34G | POWER MOSFET |
| IRLIZ14G | POWER MOSFET |
| IRLIZ24G | HEXFET POWER MOSFET |
| IRLIZ24N | Power MOSFET |
| IRLIZ24NPBF | Power MOSFET |
| IRLIZ44G | POWER MOSFET |
| IRLIZ44N | POWER MOSFET |
| IRLIZ44NPBF | Power MOSFET |
| IRLI2203G | POWER MOSFET |