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IRLIZ34NPBF Datasheet HEXFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

General Description

l l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.035Ω G S ID = 22A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.

Overview

PD - 95455 IRLIZ34NPbF Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist.

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