IRLL2705PBF Overview
l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.04Ω G ID = 3.8A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use...
IRLL2705PBF Key Features
- Dynamic dv/dt Rating
- Logic-Level Gate Drive
- Fast Switching
- Ease of Paralleling
- Advanced Process Technology
- Ultra Low On-Resistance