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International Rectifier Electronic Components Datasheet

IRLML5203PBF-1 Datasheet

Power MOSFET

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IRLML5203PBF-1 pdf
VDS
RDS(on) max
(@VGS = -10V)
RDS(on) max
(@VGS = -4.5V)
Qg (typical)
ID
(@TA = 25°C)
-30 V
98
mΩ
165
9.5 nC
-3.0 A
IRLML5203PbF-1
HEXFET® Power MOSFET
G1
3D
S2
Micro3TM
Features
Industry-standard pinout SOT-23 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRLML5203TRPbF-1
Package Type
Micro3(SOT-23)
Standard Pack
Form
Quantity
Tape and Reel 3000
Orderable Part Number
IRLML5203TRPbF-1
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambientƒ
Max.
-30
-3.0
-2.4
-24
1.25
0.80
10
± 20
-55 to + 150
Max.
100
Units
V
A
W
mW/°C
V
°C
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 28, 2014


International Rectifier Electronic Components Datasheet

IRLML5203PBF-1 Datasheet

Power MOSFET

No Preview Available !

IRLML5203PBF-1 pdf
IRLML5203PbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
ΔV(BR)DSS/ΔTJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
-30 ––– –––
––– 0.019 –––
––– ––– 98
––– ––– 165
-1.0 ––– -2.5
3.1 ––– –––
––– ––– -1.0
––– ––– -5.0
––– ––– -100
––– ––– 100
––– 9.5 14
––– 2.3 3.5
––– 1.6 2.4
––– 12 –––
––– 18 –––
––– 88 –––
––– 52 –––
––– 510 –––
––– 71 –––
––– 43 –––
Units
V
V/°C
mΩ
V
S
µA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = -250μA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -3.0A ‚
VGS = -4.5V, ID = -2.6A ‚
VDS = VGS, ID = -250μA
VDS = -10V, ID = -3.0A
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 70°C
VGS = -20V
VGS = 20V
ID = -3.0A
VDS = -24V
VGS = -10V ‚
VDD = -15V ‚
ID = -1.0A
RG = 6.0Ω
VGS = -10V
VGS = 0V
VDS = -25V
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min. Typ. Max. Units
––– ––– -1.3
––– ––– -24
––– ––– -1.2
––– 17 26
––– 12 18
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = -1.3A, VGS = 0V
TJ = 25°C, IF = -1.3A
di/dt = -100A/μs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 400μs; duty cycle 2%.
ƒ Surface mounted on FR-4 board, t 5sec.
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 28, 2014


Part Number IRLML5203PBF-1
Description Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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IRLML5203PBF-1 pdf
IRLML5203PBF-1 Datasheet PDF
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