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IRLMS2002PbF Datasheet HEXFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

General Description

These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

The Micro6™ package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23.

Overview

PD- 95675 IRLMS2002PbF l Ultra Low On-Resistance l N-Channel MOSFET l Surface Mount l Available in Tape & Reel l 2.