📁 Similar Datasheet
Part Number
Description
Manufacturer
IRLR014PBF
Power MOSFET
Vishay Siliconix
IRLR014
Power MOSFET
Vishay Siliconix
IRLR014A
N-Channel MOSFET
INCHANGE
IRLR020
N-Channel MOSFET
Samsung Electronics
IRLR024
N-Channel MOSFET
Samsung Electronics
Other Datasheets by International Rectifier (now Infineon)
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PD - 95360A
IRLR014PbF IRLU014PbF
•
Lead-Free
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1
1/10/05
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IRLR/U014PbF
2
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IRLR/U014PbF
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3
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4
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IRLR/U014PbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance
+ +
-
• dv/dt controlled by RG • ISD controlled by Duty Factor "D"
+ -
*
Reverse Polarity for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.