Datasheet4U Logo Datasheet4U.com

IRLR024NPBF - Power MOSFET

This page provides the datasheet information for the IRLR024NPBF, a member of the IRLU024NPBF Power MOSFET family.

Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area.

📥 Download Datasheet

Datasheet preview – IRLR024NPBF

📁 Similar Datasheet

  • IRLR024N - N-Channel MOSFET (INCHANGE)
  • IRLR024 - N-Channel MOSFET (Samsung Electronics)
  • IRLR024 - Power MOSFET (Vishay)
  • IRLR020 - N-Channel MOSFET (Samsung Electronics)
  • IRLR014 - Power MOSFET (Vishay Siliconix)
  • IRLR014A - N-Channel MOSFET (INCHANGE)
  • IRLR014PBF - Power MOSFET (Vishay Siliconix)
  • IRLR110 - Power MOSFET (Vishay)
  • IRLR110A - Power MOSFET (Fairchild Semiconductor)
  • IRLR120 - Power MOSFET (Vishay)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD- 95081A IRLR024NPbF IRLU024NPbF HEXFET® Power MOSFET l Logic-Level Gate Drive D l Surface Mount (IRLR024N) l Straight Lead (IRLU024N) l Advanced Process Technology l Fast Switching G l Fully Avalanche Rated l Lead-Free S Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. VDSS = 55V RDS(on) = 0.065Ω ID = 17A The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
Published: |