| Part number | IRLR024PBF |
|---|---|
| Datasheet | IRLR024PBF_InternationalRectifier.pdf |
| File Size | 766.67 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | HEXFET POWER MOSFET |
|
|
1 08/01/06 IRLR/U024PbF 2 .irf. IRLR/U024PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer + + - dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + - Reverse Polarity for P-Channel Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
IRLR024 | N-Channel MOSFET | Samsung Electronics |
 |
IRLR024 | Power MOSFET | Vishay |
 |
IRLR024N | N-Channel MOSFET | INCHANGE |
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRLR024 | (IRLU/R024) Power MOSFET |
| IRLR024N | Power MOSFET |
| IRLR024NPBF | Power MOSFET |
| IRLR024Z | Power MOSFET |
| IRLR024ZPbF | Power MOSFET |
| IRLR014 | HEXFET POWER MOSFET |
| IRLR014N | HEXFET Power MOSFET |
| IRLR014NPBF | HEXFET POWER MOSFET |
| IRLR014PBF | Power MOSFET |
| IRLR110 | POWER MOSFET |
