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IRLR024Z - Power MOSFET

Download the IRLR024Z datasheet PDF. This datasheet also covers the IRLU024Z variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • n n n n n n Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V G S RDS(on) = 58mΩ ID = 16A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLU024Z_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRLR024 N-Channel MOSFET Samsung Electronics
IRLR024 Power MOSFET Vishay
IRLR024N N-Channel MOSFET INCHANGE
IRLR020 N-Channel MOSFET Samsung Electronics
IRLR014 Power MOSFET Vishay Siliconix

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLR024ZPbF Power MOSFET
IRLR024 (IRLU/R024) Power MOSFET
IRLR024N Power MOSFET
IRLR024NPBF Power MOSFET
IRLR024PBF HEXFET POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95825A AUTOMOTIVE MOSFET IRLR024Z IRLU024Z HEXFET® Power MOSFET D Features n n n n n n Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V G S RDS(on) = 58mΩ ID = 16A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
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