Datasheet Summary
- 95825A
AUTOMOTIVE MOSFET
IRLR024Z IRLU024Z
HEXFET® Power MOSFET
Features n n n n n n
Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 55V
RDS(on) = 58mΩ ID = 16A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These Features bine to make this design an extremely efficient and reliable...
