IRLR120N Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) l Advanced Process Technology l Fast Switching l Fully Avalanche.

Datasheet Details

Part number	IRLR120N
Manufacturer	International Rectifier (now Infineon)
File Size	169.46 KB
Description	Power MOSFET
Datasheet	IRLR120N-InternationalRectifier.pdf

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Key Features

0.46 (.018) 4 1.02 (.040) 1.64 (.025) 123 6.22 (.245) 5.97 (.235) 10.42 (.410) 9.40 (.370) 1.52 (.060) 1.15 (.045) 2X 1.14 (.045) 0.76 (.030) -B - 3X 0.89 0.64 (.035) (.025) 0.25 (.010) M AMB 6.45 (.245) 5.68 (.224) 0.51 (.020) M IN. 0.58 (.023) 0.46 (.018) LE A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - SOURCE 4 - D R A IN 2.28 (.090) 4.57 (.180) NOTES: 1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 2 C O N TR O LLIN G D IM E N S IO N : IN C.

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