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IRLR3705Z - AUTOMOTIVE MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Logic Level Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l IRLR3705Z IRLU3705Z HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 8.0mΩ.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com PD - 96896 AUTOMOTIVE MOSFET Features Logic Level Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l IRLR3705Z IRLU3705Z HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 8.0mΩ Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
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