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IRLR3705ZPBF - POWER MOSFET

General Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Additional

Overview

PD - 95956A IRLR3705ZPbF.

Key Features

  • l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G IRLU3705ZPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 8.0mΩ.