Datasheet Summary
- 95090B
IRLR3915PbF IRLU3915PbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
HEXFET® Power MOSFET
VDSS = 55V
RDS(on) = 14mΩ
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
ID = 30A
D-Pak
I-Pak...
