Datasheet4U Logo Datasheet4U.com

IRLR3915 - Power MOSFET

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 14mΩ.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRLR3915 N-Channel MOSFET INCHANGE
IRLR3103 N-Channel MOSFET INCHANGE
IRLR3105 N-Channel MOSFET INCHANGE
IRLR3110Z N-Channel MOSFET INCHANGE
IRLR3110ZPBF N-Channel MOSFET VBsemi

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLR3915PBF Power MOSFET
IRLR3103 Power MOSFET
IRLR3103PbF Power MOSFET
IRLR3105 HEXFET Power MOSFET
IRLR3105PBF HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95090B IRLR3915PbF IRLU3915PbF Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 14mΩ Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Published: |