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International Rectifier Electronic Components Datasheet

IRLR6225TRPbF Datasheet

Power MOSFET

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VDS
RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
Qg (typical)
RG (typical)
ID
Applications
Battery Protection Switch
20 V
4.0 m
5.2 m
48 nC
2.2
42h A
G
PD - 97594
IRLR6225PbF
HEXFET® Power MOSFET
DD
S
G
Gate
S
G
D-Pak
IRLR6225PbF
D
Drain
S
Source
Features and Benefits
Features
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Multi-Vendor Compatibility
results in Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRLR6225PbF
IRLR6225TRPbF
Package Type
D-PAK
D-PAK
Standard Pack
Form
Quantity
Tube/Bulk
75
Tape and Reel
2000
Note
Absolute Maximum Ratings
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Notes  through † are on page 8
www.irf.com
Max.
20
±12
100h
63h
400
63
25
0.5
-55 to + 150
300 (1.6mm from case)
Units
V
A
W
W/°C
°C
1
11/15/2010


International Rectifier Electronic Components Datasheet

IRLR6225TRPbF Datasheet

Power MOSFET

No Preview Available !

IRLR6225PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/TJ
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
Min.
20
–––
–––
–––
0.5
–––
–––
–––
–––
–––
205
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
6.6
3.2
4.2
0.8
-4.0
–––
–––
–––
–––
–––
48
2.6
3.6
19
23
23
21
2.2
9.7
37
63
52
3770
915
650
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
e4.0
e5.2
m
VGS = 4.5V, ID = 21A
VGS = 2.5V, ID = 17A
1.1
–––
V
mV/°C
VDS
=
VGS,
ID
=
50µA
1.0
150
100
-100
–––
72
µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
nA
VGS = 12V
VGS = -12V
S VDS = 10V, ID = 21A
––– VDS = 10V
–––
–––
nC
VGS = 4.5V
ID = 17A
––– See Fig.17 & 18
–––
––– nC VDS = 16V, VGS = 0V
–––
––– VDD = 10V, VGS = 4.5V
–––
–––
ns
ID = 17A
RG=1.8
––– See Fig.15
––– VGS = 0V
––– pF VDS = 10V
––– ƒ = 1.0MHz
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
™EAR Repetitive Avalanche Energy
Diode Characteristics
Typ.
–––
–––
–––
Max.
170
17
6.3
Units
mJ
A
mJ
Parameter
IS Continuous Source Current
h(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
h––– ––– 100
MOSFET symbol
D
––– ––– 400
A
showing the
integral reverse
G
p-n junction diode.
S
––– ––– 1.2
eV TJ = 25°C, IS = 17A, VGS = 0V
––– 35 53 ns TJ = 25°C, IF = 17A, VDD = 10V
––– 57 86 nC di/dt = 200A/µs
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
fRθJC Junction-to-Case
gRθJA Junction-to-Ambient (PCB Mount)
gRθJA Junction-to-Ambient
Typ.
–––
–––
–––
Max.
2.0
50
110
Units
°C/W
2 www.irf.com


Part Number IRLR6225TRPbF
Description Power MOSFET
Maker International Rectifier
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IRLR6225TRPbF Datasheet PDF





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