Full PDF Text Transcription for IRLR8103V (Reference)
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IRLR8103V. For precise diagrams, and layout, please refer to the original PDF.
ters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications G D • 100% RG Tested Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRLR8103V has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
IRLR8103V Datasheet
