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International Rectifier Electronic Components Datasheet

IRLR8726 Datasheet

Power MOSFET

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PD - 97146A
IRLR8726PbF
IRLU8726PbF
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg (typ.)
: 30V 5.8m @VGS = 10V 15nC
D
D
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
l RoHS compliant
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
™ Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
h Maximum Power Dissipation
h Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
S
D
G
D-Pak
IRLR8726PbF
S
D
G
I-Pak
IRLU8726PbF
G
Gate
D
Drain
S
Source
Max.
30
± 20
86f
61f
340
75
38
0.5
-55 to + 175
300 (1.6mm from case)
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
h Junction-to-Case
ghà Junction-to-Ambient (PCB Mount)
h Junction-to-Ambient
Notes  through † are on page 11
Typ.
–––
–––
–––
Max.
2.0
50
110
Units
°C/W
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
www.irf.com
1
11/23/09


International Rectifier Electronic Components Datasheet

IRLR8726 Datasheet

Power MOSFET

No Preview Available !

IRLR/U8726PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
73
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
20
4.0
5.8
1.80
-8.6
–––
–––
–––
–––
–––
15
3.7
1.9
5.7
3.7
7.6
10
2.0
12
49
15
16
2150
480
205
–––
–––
5.8
8.0
2.35
–––
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
e mVGS = 10V, ID = 25A
e VGS = 4.5V, ID = 20A
V VDS = VGS, ID = 50µA
mV/°C
1.0
150
100
-100
–––
23
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 20A
–––
VDS = 15V
––– nC VGS = 4.5V
–––
ID = 20A
–––
See Fig. 15
–––
––– nC VDS = 15V, VGS = 0V
3.5
–––
e VDD = 15V, VGS = 4.5V
–––
ID = 20A
––– ns RG = 1.8
–––
See Fig. 13
–––
VGS = 0V
––– pF VDS = 15V
–––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
IAR
d Single Pulse Avalanche Energy
Ù Avalanche Current
Typ.
–––
–––
Max.
120
20
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ù (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Min. Typ. Max. Units
Conditions
f ––– ––– 86
MOSFET symbol
A showing the
––– ––– 340
integral reverse
––– ––– 1.0
––– 24 36
––– 52 78
p-n junction diode.
e V TJ = 25°C, IS = 20A, VGS = 0V
ns TJ = 25°C, IF = 20A, VDD = 15V
e nC di/dt = 300A/µs
www.irf.com


Part Number IRLR8726
Description Power MOSFET
Maker International Rectifier
PDF Download

IRLR8726 Datasheet PDF






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