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IRLU024NPBF - Power MOSFET

Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area.

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PD- 95081A IRLR024NPbF IRLU024NPbF HEXFET® Power MOSFET l Logic-Level Gate Drive D l Surface Mount (IRLR024N) l Straight Lead (IRLU024N) l Advanced Process Technology l Fast Switching G l Fully Avalanche Rated l Lead-Free S Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. VDSS = 55V RDS(on) = 0.065Ω ID = 17A The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
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