Datasheet Summary
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- 96896
AUTOMOTIVE MOSFET
Features
Logic Level Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l
IRLR3705Z IRLU3705Z
HEXFET® Power MOSFET
VDSS = 55V RDS(on) = 8.0mΩ
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These Features bine to make this design an extremely efficient and...