IRLU3715Z - HEXFET Power MOSFET

This page provides the datasheet information for the IRLU3715Z, a member of the IRLR3715Z HEXFET Power MOSFET family.

Features

ncluded in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the outpu.

International Rectifier

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Datasheet Details

Part number	IRLU3715Z
Manufacturer	International Rectifier
File Size	199.36 KB
Description	HEXFET Power MOSFET
Datasheet	IRLU3715Z Datasheet
Additional preview pages of the IRLU3715Z datasheet.

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Full PDF Text Transcription

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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current PD - 94650A IRLR3715Z IRLU3715Z HEXFET® Power MOSFET VDSS RDS(on) max Qg :20V 11m 7.

Published: Dec 24, 2014 |