IRLU4343-701PbF Datasheet - International Rectifier

Digital Audio MOSFET

IRLU4343-701PbF Features

* l Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency l Low Qrr for Better THD and Lower EMI l 175°C Operating Junction Temperature for Ruggedness l Repetitive Aval

IRLU4343-701PbF General Description

This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to impro.

IRLU4343-701PbF Datasheet (295.05 KB)