Download the IRLZ44ZL datasheet PDF.
This datasheet also covers the IRLZ44Z variant, as both devices belong to the same automotive mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.
Key Features
Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 55V
G S
RDS(on) = 13.5mΩ ID = 51A.
Note: The manufacturer provides a single datasheet file (IRLZ44Z_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IRLZ44ZL (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRLZ44ZL. For precise diagrams, and layout, please refer to the original PDF.
PD - 95849 AUTOMOTIVE MOSFET IRLZ44Z IRLZ44ZS IRLZ44ZL HEXFET® Power MOSFET D Features ● ● ● ● ● ● Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C O...
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ogic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V G S RDS(on) = 13.5mΩ ID = 51A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive appl
IRLZ44ZL Datasheet
